News

IEEE1d
Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors - IEEE Xplore
We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet ...
IEEE10d
Contamination control in Axcelis Purion platform ion implanters
Industry consolidation in semiconductor manufacturing, driven by commoditization and decreasing margins, is placing ever increasing pressure on fab productivity. Concomitant technology innovation, ...
C&EN15d
Coligand Effects on the Field-Induced Double Slow Magnetic Relaxation in Six-Coordinate Cobalt(II) Single-Ion Magnets (SIMs) with Positive Magnetic Anisotropy - ACS Publications
Two mononuclear cobalt (II) compounds of formula [Co (dmphen) 2 (OOCPh)]ClO 4 ·1/2H 2 O·1/2CH 3 OH (1) and [Co (dmbipy) 2 (OOCPh)]ClO 4 (2) (dmphen = 2,9-dimethyl-1,10-phenanthroline, dmbipy = ...
C&EN27d
Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering - ACS Publications
We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The ...