Based on the physical model of nanocrystal (NC) memories described in Part I, a systematic investigation of gate-stack engineering is presented, including high-K control and tunneling oxides. The high ...

Abstract: Degradation of p-MOSFET parameters during negative-bias temperature instability (NBTI) stress is studied for different nitridation conditions of the silicon oxynitride (SiON) gate dielectric ...

This example also shows how the wheel’s evolution, much like its iconic shape, traces a circuitous path – one with no clear beginning, no end and countless quiet revolutions along the way.

However, as the gate-drive converters are powered up or down, a transient condition may exist where devices could be driven on, even with the PWM signal inactive, leading to shoot-through and damage.