Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply ...

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems.

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Renesas Electronics Corporation has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems, including the new 800V HVDC architecture, e-mobility charging, ...

Scientists Develop New Crystal-Powered Transistor with Better Performance Than Traditional Chips Researchers at the University of Tokyo’s Institute of Industrial Science have recently made a ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 ...

Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...

Renesas has introduced three 650V GaN power transistors, aimed at server power supplies and e-mobility chargers. "Designed ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

The remote variable resistor functions as a voltage-controlled resistor whose resistance changes based on an applied voltage.