Toshiba Electronics Europe has expanded its portfolio with the introduction of a series of two-channel, high-speed digital ...

The second product in the SmartMCD series, TB9M001FTG, can be configured to transition to standby mode in the idle state to ...

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply ...

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems.

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Renesas Electronics Corporation has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems, including the new 800V HVDC architecture, e-mobility charging, ...

Scientists Develop New Crystal-Powered Transistor with Better Performance Than Traditional Chips Researchers at the University of Tokyo’s Institute of Industrial Science have recently made a ...

As AI continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A leader in power semiconductor technology, ROHM is among the key ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 ...

Alpha and Omega Semiconductor Limited introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3×3.3 Source-Down ...