A multinational team has cracked a long-standing barrier to reliable quantum computing by inventing an algorithm that lets ordinary computers faithfully mimic a fault-tolerant quantum circuit built on ...

"No act of kindness, no matter how small, is ever wasted." We’re proud to share: As the rainy season swept through China, SLKOR teams took to the streets of Shenzhen’s Huaqiangbei yesterday. We ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Offering outstanding current handling capabilities, the MOSFET’s DFN3.3x3.3 Source-Down packaging technology with clip allows continuous current capabilities up to 319A with a maximum junction ...

ROHM has developed an isolated gate driver IC - the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When ...

TORRANCE, Calif., June 24, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, has ...

As AI continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A leader in power semiconductor technology, ROHM is among the key ...

Carbon nanotube-based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance against gate voltage. This paper compares and analyzes ...

Unlike a new generation of tech billionaires, Gates has not gone MAGA (though he did have a three-hour-long dinner with Donald Trump after the 2024 election, and came away “impressed”).

Researchers from Sandia National Laboratories, Albuquerque, have delivered a dramatic improvement in the performance of vertical GaN MOSFETs through the introduction of a HfO 2 gate dielectric. This ...