The double-gate SOI structure is believed to be the most scalable technology down to the 0.02/spl mu/m regime. However, experimental study of double-gate related phenomena has been hindered by the ...

Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...

A novel field effect transistor (FET), asymmetric gate (AG) FET, is proposed and its excellent performance has been demonstrated numerically in this paper. Compared with the conventional MOSFET, the ...