The double-gate SOI structure is believed to be the most scalable technology down to the 0.02/spl mu/m regime. However, experimental study of double-gate related phenomena has been hindered by the ...

Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...

A multinational team has cracked a long-standing barrier to reliable quantum computing by inventing an algorithm that lets ordinary computers faithfully mimic a fault-tolerant quantum circuit built on ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...

Alpha & Omega Semiconductor Announced Resolution with the Department of Commerce’s Bureau of Industry and Security ...

Reflections from a recent panel discussion at DAC, The Chips to Systems Conference held at Moscone West on the CHIPS Act's impact on the design ecosystem ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 ...

"No act of kindness, no matter how small, is ever wasted." We’re proud to share: As the rainy season swept through China, SLKOR teams took to the streets of Shenzhen’s Huaqiangbei yesterday. We ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...