Power modules are great for high-power applications, but discrete MOSFETs offer many benefits, making them viable for the ...

Power MOSFET Market Size & Growth Insights: According to the SNS Insider,“The Power MOSFET Market size was valued at USD 27.53 billion in 2024 and is expected to reach USD 48.40 billion by 2032, ...

Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents.

TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

The IGTO (t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO (t) to address the multibillion-dollar market gap between ...

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems.

Today, we continue our amd frame Project - over the coming months we are going to create a heavily customised build for AMD. Then give it away to one lucky KitGuru reader. Includes building the custom ...

RY7P250BM – optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring ...

To enhance the electrical performance and reliability of silicon carbide (SiC) power modules, the study explores Cu-clip as a promising alternative to traditional Al-wire interconnections. SiC power ...

A single VGaN replaces two back-to-back Si MOSFETs, reducing solution size by over ... USB port protection in mobile devices; high-side load switches in bi-directional converters; and multi-power rail ...