ROHM has responded to this requirement with the development of an ultra-compact low ON-resistance MOSFET that’s been ...

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2mΩ (typ.) in a compact 2mm × 2mm package.

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the ...

Scientists have discovered novel drug candidates which could ultimately lead to new effective treatments for conditions ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Power Transistors Market Power Transistors Market Expected to Reach $23.3 Billion by 2032-Allied Market Research The power transist ...

Researchers at the University of California, Riverside, have uncovered how to manipulate electrical flow through crystalline ...

Navitas Semiconductor NVTS is actively forging strategic collaborations and partnerships across the power electronics ecosystem, accelerating the adoption of its gallium nitride (GaN) and silicon ...

IGBT and Super Junction MOSFET Market was valued at $11.1 billion in 2021, is projected to reach $33.1 billion by 2031, grow at a CAGR of 11.4% from 2022-2031. The industrial robotics and electric ...

Semi Corporation announced the introduction of a new high-performance mmWave SPDT RF switch: the PE42528. Built on pSemi’s ...

Built on proven SuperGaN Technology, 650-V Gen IV Plus devices are designed to deliver robust performance with superior ...

Renesas Electronics Corporation has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems, including the new 800V HVDC architecture, e-mobility charging, ...