This paper presents a predictive model of Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) chip behavior during a short circuit phasis. This model describes the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.