In this paper the performance of Si, SiC and GaN MOSFETs is compared for a low power (5W) and high voltage (800V) two-phased quasi resonant flyback converter. The first step is the selection of proper ...

The transient signals generated during the switching instants of SiC MOSFET power modules comprise distinct high-frequency and low-frequency components. High-frequency components (ranging from several ...

Elaborating on a Flip ON Flop OFF circuit with a circuit that allows for a multi-state 10-position switch or a DAC.

Although SiC-mosfet has significant advantages on switching performance over traditional Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the increment in the ...