Compared to Si IGBTs, SiC MOSFETs can reduce switching losses, achieve higher switching frequencies and enable smaller converter size. However, due to the high dv/dt of SiC MOSFETs, certain topologies ...

In this paper the performance of Si, SiC and GaN MOSFETs is compared for a low power (5W) and high voltage (800V) two-phased quasi resonant flyback converter. The first step is the selection of proper ...