Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature. As expected, the ...

The paper presents switching process comparison among the gallium nitride (GaN) and the Superjunction (SJ) MOSFET transistors applied in the resonant switched-capacitor (SC) DC-DC converter. The ...