ROHM has responded to this requirement with the development of an ultra-compact low ON-resistance MOSFET that’s been ...

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the ...

IGBT and Super Junction MOSFET Market was valued at $11.1 billion in 2021, is projected to reach $33.1 billion by 2031, grow at a CAGR of 11.4% from 2022-2031. The industrial robotics and electric ...

Unfortunately, the MOSFET switches on and off dozens of times per second, so heat becomes a significant issue in the design of a VRM.

Target applications for the reference designs (which are detailed on the company website) include over-voltage protection ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Silicon Carbide (SiC) MOSFETs are promising replacements for Silicon (Si) IGBTs in various power electronic topologies. While extensive research exists on SiC MOSFET based 2-quadrant switches, studies ...

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2mΩ (typ.) in a compact 2mm × 2mm package.

The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel ...

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that ...