News
We report on the integration of sub-melt laser spike annealing (LSA) on W-gate stacked DRAM. We applied the LSA as a reactivation in back-end processes to comply with the considerable metal-pattern ...
In this work, we demonstrate an advanced 22 nm fully depleted silicon-on-insulator substrate (FD-SOI) process for very large scale integrated circuit (VLSI). The fabrication process features hybrid ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results