Low-loss reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with the builtin Schottky barrier diode (SBD) has been systematically studied. This device features the MOS-gate ...

We report experimental results on the dc and ac characterization of multiterminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlO x), and a ferromagnetic material ...