Abstract: Synaptic transistors mimicking the biological synapse's short term plasticity and short-term memory property were demonstrated using the amorphous indium-gallium-zinc oxide channel in ...

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...

Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and ...