A new physically based classical model for the potential distribution of an undoped body cylindrical gate-all-around nanowire transistor is proposed. The model is based on the analytical solution of 2 ...

Transmission Electron Microscopy (TEM) of Silicon Nanowire Growth below 600C Start-up Solar-Tectic LLC Is Announcing its Entry into the Bio ...

We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed.

This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at ...

Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors 47 views 83 shares 0 downloads Download ...