In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are ...

In this work, by employing self-consistent solver we study Capacitance-Voltage (C-V) characteristics and the threshold voltage variation of p-type Rectangular Gate Junctionless Field Effect Transistor ...