Power electronics competitive landscape is undergoing transformation. European and Japanese companies dominate, but, Chinese ...

N thin films with record-high scandium levels, with exciting potential for ultra-low-power memory devices, as reported by ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

Uncertified devices for charging electronics are banned from domestic flights, leaving some people caught off guard at ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Each strike carries billions of watts of power, posing a threat to homes and their appliances and electronics.

In this engaging tutorial, learn how to make a simple electric power vibration device at home using easily accessible ...

The quantum battery (QB) has been proposed as an alternative to the electrochemical energy storage devices we know so well.

TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server ...

Researchers at the Institute of Science Tokyo have developed scandium-rich (Al,Ga,Sc)N thin films with record-low switching voltages, unlocking new possibilities for non-volatile memory, ...