In common applications electric drives mostly do not operate at full but at partial load. Concerning the energy efficiency of the electric drive not the maximum efficiency is essential but the ...

Following its acquisition of US-based GaN pioneer Transphorm, Renesas Electronics is ramping up its ambitions in the wide-bandgap power semiconductor space. With a bold pivot away from the crowded ...

Renesas Electronics Corporation has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems, including the new 800V HVDC architecture, e-mobility charging, ...