It is fabricated with a TSMC 40 nm standard RF CMOS process. The measurements show that the designed PA reaches a 1 dB gain compression output power of 24.6 dBm and a peak drain efficiency of 38% with ...

Digging through IMS 2025’s technical sessions unearthed some insights into the microwave industry’s research inclinations, ...

Packet loss and latency variations on internet links require the use of additional protocols such as SRT and RIST. Papers in Broadcast Engineering and IT (BEIT) sessions from One Media Technologies ...

KYOCERA AVX, a leading global manufacturer of advanced electronic components engineered to accelerate technological innovation and build a better future, released a new line of integrated thin film ...

Key milestones in GaN RF technology include unveiling the first Ka-band GaN MMIC power amplifier at the 2004 IEEE International Microwave Symposium, the first W-band GaN MMIC power amplifier at the ...

MIT develops a low-power 5G receiver chip to boost battery life, reduce interference, and improve IoT and wearable device performance.

04 Sep 2024 (Johannesburg Stock Exchange) The JSE Limited has given the green light for the listing of an additional 300,000 FNB Top 40 ETF securities, which will take effect from the start of ...

This paper presents a highly linear cascode power amplifier (PA) for 5-GHz 802.11ac (wireless local area network) WLAN applications, which is fabricated with a 0.13-μm standard RF CMOS process. A ...

Flooding and rock slides close heavily damaged I-40 section in Smoky Mountains Heavy rain, flooding and a rock slide have again closed a section of the major cross country highway Interstate 40 ...

pSemi ® Corporation, a Murata company leading in the design and development of semiconductor integration and advanced connectivity, today announced the introduction of PE42448: a high-linearity ...