The TA1165 is a Class AB gallium nitride (GaN)-based amplifier delivering up to 20 W of RF output power across the 5.5 GHz to ...

The advantages of power amplifier designs on RF GaN-on-Si technology as higher frequencies for 5G advanced and 6G emerge, ...

RF & Microwave featured on Electronics Weekly. All the latest news for electronics engineers & professionals involved in the design & development industry.

This paper proposes a CMOS linear power amplifier (PA) design scheme for IEEE 802.11g (WLAN) application. The proposed PA consists of a programmable gain amplifier and a high power stage which is ...

Advances in MMIC and RFIC technologies are driving 5G/6G and satellite communications with multi-band support, digital ...

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The 3rd-order Volterra kernels of a radio frequency (RF) power amplifier (PA) are characterized using a large-signal and a two-tone probing-signal. In this tech ...