In Sumy, as well as in Sumy and Akhtyrsky districts, there were power outages after the strikes RF Armed Forces. This was ...

Digging through IMS 2025’s technical sessions unearthed some insights into the microwave industry’s research inclinations, which in turn provide a look into the future.

The advantages of power amplifier designs on RF GaN-on-Si technology as higher frequencies for 5G advanced and 6G emerge, ...

In this article, the simultaneous perturbation stochastic approximation (SPSA) algorithm is proposed to optimize the threshold of the canonical piecewise linear (CPL) function-based models for radio ...

Researchers at the National Institute of Standards and Technology (NIST) have demonstrated a new and faster method for ...

Wise Integration launches its first fully digital controller, enabling high-frequency operation up to 2 MHz for GaN totem-pole PFC architectures.

As wireless standards grow more complex—supporting multiple frequency bands, high-speed data, and low-latency ...

The TA1165 is a Class AB gallium nitride (GaN)-based amplifier delivering up to 20 W of RF output power across the 5.5 GHz to ...

A research team affiliated with UNIST has unveiled a new semiconductor device optimized for the next-generation 6G era and ...

Digital predistortion (DPD) has proven to be an efficient method of linearizing power amplifiers (PAs). In recent years, the use of neural networks (NNs) for DPD has gained momentum. This development ...