SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Sixteen planar Schottky diodes for automotive and industrial use are now available from Nexperia in compact CFP2-HP packages.

GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V GS) due to the lack of body diode. Moreover, the V TH of a GaN transistor ...

The use of photovoltaic modules in urban areas often results in partial shading, which leads to considerable energy losses ...

The work is being carried out as part of the "SegmentPV" project, which runs until the end of September. By segmenting the module layout and using integrated bypass diodes, the new module achieves ...

The new findings can enhance the design and lifespan of various plasma-based technologies. “Many frontier technologies of ...

SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.

Building-integrated photovoltaics (PV) fundamentally represents a revolutionary method of building and energy conversion. It incorporates solar technology into the structure of buildings, transforming ...

Kopin targets defense and industrial markets with AR/VR innovations, but struggles with profitability. Click here to read why ...

In this tutorial, we will study the behavior of a diode reverse-biased by a Dirac pulse, subsequently considering the special (and unpublished) case of a Zener diode. In this tutorial, we will study ...