Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped ...

Researchers at the Institute of Industrial Science, The University of Tokyo, have produced a new type of transistor, which is a key component of electronics. The transistor channel was constructed ...

Microwaves can control a single quantum bit more precisely than ever before, creating a device similar to a quantum transistor – and potentially making quantum computers more reliable ...

A team of researchers from Peking University claims to have developed a non-silicon transistor that is faster and more power-efficient than the latest tech in the industry. If the claim, which is ...

Researchers get spiking neural behavior out of a pair of transistors New approach to improving AI performance turns a silicon problem into a feature.

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Science Industry cpu transistor MIT's 3D nanoscale transistors use quantum tunneling design to bypass physical limits Overcoming "Boltzmann tyranny" to maybe one day enable far more efficient ...

A new single-transistor neuron simplifies complex logic functions, enabling compact, energy-efficient neuromorphic systems with significant AI potential.

Gallium nitride semiconductors can successfully withstand the harsh environment near a nuclear reactor core, researchers from Oak Ridge National Laboratory have found. The discovery could enable ...

From the datasheet, the UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low ...

Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions.

The structure of the Si-based transistors would be changed from the fin field-effect transistor (FinFET) to the cutting-edge Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs) at 3 nm node.