The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

While SiC offers benefits to designers and consumers, its manufacturing is substantially more expensive than silicon.

Assessment of proper material specifications at the substrate level is mandatory for successful high-performances SiC power devices. However, SiC defects must be screened during device fabrication ...

A new study by Professor Tao Sun tracks the evolution of crystallographic defects in real time during metal additive manufacturing.

This action must be applied not only for mono SiC material but also for SiC-engineered materials. The correlation between crystallographic defects and 650V MOSFET device failures after reliability ...

The effect is typically less drastic than that of SiC due to the broader bandgap in SiC and elevated operating temperatures, where defects spread and result in a higher density of crystallographic and ...

These lattice defects have profound effects with regard to device reliability. While improvements in SiC crystal growth techniques have recently been made, managing crystallographic defect occurrences ...

“Through this collaboration, where centrotherm’s specialized tools are integrated into IME’s 200-mm open R&D SiC pilot line, we aim to further optimize the processes and recipes of centrotherm’s tools ...

31.10.2023 12:00 Unique X-ray Topography Based Defect Characterization for SiC Wafers Honored with Georg Waeber Innovation Award 2023 Amelie Schardt Presse/Media Fraunhofer-Institut für ...

Such data connection will enable SiC manufacturing to accelerate yield learning and lower overall test costs. “In general, compound semiconductor technology — be it SiC, GaN, GaAs, InP, or else — is ...

In SiC, epitaxial layer growth parameters are extremely critical for wafer quality. Crystallographic contaminations and defects during growth processes can extend to the wafer surface and epitaxial ...

To meet the enormous SiC demand from EVs, SiC wafer producers are on course to transition toward 8-inch wafer production.