The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

A new technical paper titled “Domain Adaptation for Image Classification of Defects in Semiconductor Manufacturing” was published by researchers at Infineon Technologies, University of Padova and ...

This study presents systematic research of the parallel slits originating from the polytype boundaries in the 4H silicon carbide (4H-SiC) single crystals grown by the physical vapor transport (PVT) ...

Wide-gap semiconductor SiC is generally considered as a superior candidate for high-radiation applications, due to its higher displacement energy for both Si and C lattice atoms. In this work, we find ...

In this research, a novel etching technique using a eutectic solution consisting of potassium hydroxide (KOH), sodium hydroxide (NaOH), and magnesium oxide (MgO) was developed for the investigation of ...

Spin defects in solid-state materials offer a platform for quantum sensing that combines the properties of atom-like systems with the scalability, versatility, and technological maturity of ...