An ultrathin body and buried oxide (UTBB) SOI MOSFETs with novel non-LDD source/drain extensions are proposed, where highly conductive paths are induced by positive charges locally distributed in the ...

FD-SOI MOSFETs were analyzed as a function of back-gate bias from 300 down to 8 K in the context of quasi-ballistic transport. Our analysis revealed a significantly larger effect of back-gate bias on ...