Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc oxide (IGZO) with or without plasma fluorination treatment were fabricated and the sensitivity of their characteristics to hydrogen ...

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN ...

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) ...

A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) semiconductor and poly(α-methylstyrene) ...

In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain. Read the paper: A complementary two-dimensional ...

This conceptual illustration of a computer based on 2D molecules displays an actual scanning electron microscope image of the computer fabricated by a team by researchers at Penn State. The keyboard ...