AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have ...

These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain.

In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.

At the very least, the transistor could revolutionize communications and radio signals, something that would give the US Army an advantage if the invention was kept a secret from other countries.

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using ...

The operation of field‐effect transistors (FETs) critically depends on the performance of gate dielectrics, which act as the insulating medium between the gate electrode and the semiconducting ...

Low-loss reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with the builtin Schottky barrier diode (SBD) has been systematically studied. This device features the MOS-gate ...

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, ...

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels ...