Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc oxide (IGZO) with or without plasma fluorination treatment were fabricated and the sensitivity of their characteristics to hydrogen ...

As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot ...

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) ...

Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, ...

In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain. Read the paper: A complementary two-dimensional ...