Abstract: In this work, self-aligned top-gate amorphous oxide semiconductor thin-film transistors with InZnO/InGaZnO (IZO/IGZO) stacked active layer and aluminum (Al) reacted source/drain region are ...

This paper reports the development of thin film passive elements embedded within the interlayer of a silicon interposer. Thin film resistors were developed using a seed layer formed by the sputter ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Modern low-power solutions to computer memory rely heavily on the manipulation of the magnetic properties of materials.