In this paper, a comparison of gate-all-around nanowire-FETs, nanoplate (NP)-FETs, and FinFETs was undertaken for the same areas of not only the gate metal but also the silicon channel, assuming the ...

This work presents the use of ultimately thin (15 nm) L-shaped spacers to open the process window for deposition-related steps. Whereas conventional spacers prevent the correct active area ...

Synergistic Approaches to Minimize Device Footprint and Energy Consumption in Vertical-Channel Synapse Transistors Using an InGaZnO Active Layer via Spacer Engineering of HfO 2 ...

To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to ...