This work presents the use of ultimately thin (15 nm) L-shaped spacers to open the process window for deposition-related steps. Whereas conventional spacers prevent the correct active area ...

In this paper, a comparison of gate-all-around nanowire-FETs, nanoplate (NP)-FETs, and FinFETs was undertaken for the same areas of not only the gate metal but also the silicon channel, assuming the ...