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3D stacked devices have been developed and manufactured to realize gains in power, performance, area and cost (PPAC) in various devices. In this work, CMOS directly bonded to array (CBA) technology is ...

In this paper, characteristics of Schottky Barrier (SB) NOR Flash memory devices are studied through simulation. SB Flash cell adopts source-side hot electron and hole injection (SSHEI/SSHHI) in ...