“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

“The advantage of an all-around gate allows the creation of shorter gates, without loss of control on the current through the channel,” explains Larrieu. “We demonstrated the first vertical nanowire ...

Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling. Such transistors are referred to as ...