TrendForce says that TSMC plans to repurpose its Hsinchu Fab 5, which handles GaN production, for advanced packaging.

Aixtron SE, Fraunhofer IISB and Bimanu Cloud Solutions are cooperating in a €28.4 million project called 'Increasing Energy ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

SiC chipmaker files for Chapter 11 as next step in restructuring agreement SiC chipmaker Wolfspeed has filed for Chapter 11 ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Pragmatic Semiconductor, a UK-based pioneer in flexible IGZO semiconductor technology, has appointed John Quigley as ...

CSconnected, in partnership with Cardiff Capital Region (CCR), has announced the first four successful applicants to its £1 million Supply Chain Development Programme, aimed at strengthening and ...

Key milestones in GaN RF technology include unveiling the first Ka-band GaN MMIC power amplifier at the 2004 IEEE International Microwave Symposium, the first W-band GaN MMIC power amplifier at the ...

EDA firm Silvaco has announced that Wavetek Microelectronics has adopted the Victory TCAD solution for the development of ...

Electrical measurements on these devices enabled the team to calculate a sub-threshold swing of 167 mV dec-1– a value that indicates a high-quality interface between Ga2O3and Al2O3– and determine an ...